Publications and Conference Presentations

PATENTS AND KEY PUBLICATIONS

1. S. Chowdhury, M. Dutta, R.J. Nemanich, and F.A.M. Koeck, “Diamond based current aperture vertical transistor and methods of making and using the same”, US Patent 10418475B2, Sept. 17th, 2019 (granted).

2. M. Dutta, S. Mandal, R. Hathwar, A. Fischer, F.A.M. Koeck, R.J. Nemanich, S.M. Goodnick, and S. Chowdhury, “Determination

of Minority Carrier Lifetime of Holes in Diamond PIN Diodes Using Reverse Recovery Method”, IEEE Electron Device Letters, vol. 39, no. 4, pp. 552-555, Apr. 2018.

3. M. Dutta, F. A. M. Koeck, W. Li, R. J. Nemanich, and S. Chowdhury, "High Voltage Diodes in Diamond using (100)- and (111)- Substrates", IEEE Electron Device Letters, vol. 38, no. 5, pp. 600-603, May 2017.

4. M. Dutta, F. A. M. Koeck, R. Hathwar, S. M. Goodnick, R. J. Nemanich and S. Chowdhury, "Demonstration of Diamond-Based Schottky p-i-n Diode With Blocking Voltage > 500 V", IEEE Electron Device Letters, vol. 37, no. 9, pp. 1170-1173, Sept. 2016.

OTHER PUBLICATIONS

1. S.K. Chaudhuri, M. Malakoutian, J.W. Kleppinger, M. Dutta, F.A.M. Koeck, R.J. Nemanich, S. Chowdhury, and K.C. Mandal, "Current Transient Spectroscopic Study of Vacancy Complexes in Diamond Schottky p-i-n Diode," IEEE Transactions on Electron Devices, vol. 69, no. 8, pp. 4469-4473, Aug. 2022.

2. J. Holmes, M. Dutta, F.A.M. Koeck. M.J. Benipal, R. Hathwar, J. Brown, B. Fox, H. Johnson, A. Zaniewski, R. Alarcon, S. Chowdhury, S.M. Goodnick, and R.J. Nemanich, “Neutralizing the polarizing effect of diamond diode detectors using periodic forward bias pulses”, Diam. Relat. Mater., vol. 94, pp. 162-165, Mar. 2019.

3. J.M. Holmes, M. Dutta, F.A.M Koeck, M.J. Benipal, J. Brown, B. Fox, R. Hathwar, H. Johnson, M. Malakoutian, M. Saremi, A. Zaniewski, R. Alarcon, S. Chowdhury, S.M. Goodnick, R.J. Nemanich, “A 4.5 μm PIN diamond diode for detecting slow neutrons”, Nucl. Instrum. Meth.A, vol. 903, pp. 297-301, Sept. 2018.

4. Y. Yang, F.A.M. Koeck, M. Dutta, X. Wang, S. Chowdhury, and R.J. Nemanich, "Al2O3 dielectric layers on H-terminated diamond: Controlling surface conductivity", J. Appl. Phys., vol. 122, no. 15, pp. 114503- 1-7, Oct. 2017.

5. M. Saremi, R. Hathwar, M. Dutta, F.A.M. Koeck, R.J. Nemanich, S. Chowdhury, S.M. Goodnick, "Analysis of the reverse IV characteristics of diamond-based PIN diodes", Appl. Phys. Lett., vol. 111, no. 4, pp. 043507 -1 -5, Jul. 2017.

6. R. Hathwar, M. Dutta, F.A.M. Koeck, R.J. Nemanich, S. Chowdhury, and S.M. Goodnick, “Temperature dependent simulation of diamond depleted Schottky PIN diodes”, J. Appl. Phys., vol. 119, no. 22, pp. 225703-1-7, Jun. 2016.

7. N. Bhandari, M. Dutta, J. Charles, M. Cahay, and S. T. Herbert, “Potential Applications of All Electric Spin Valves Made of Asymmetrically Biased Quantum Point Contacts”, book chapter in Nanomagnetic and Spintronic Devices for Energy-Efficient Memory and Computing, Wiley, 2016.

8. N. Bhandari, M. Dutta, J. Charles, R. Newrock, and M. Cahay, “Hysteresis in the conductance of asymmetrically biased GaAs quantum point contacts with in-plane side gates, J. Appl. Phys., vol. 114, no. 3, pp. 0337021–0337025, Jul. 2013.

9. N. Bhandari, M. Dutta, J. Charles, R. Newrock, M. Cahay, and S. Herbert, “Steps Toward an All-Electric Spin Valve Using SideGated Quantum Point Contacts With Lateral Spin Orbit Coupling”, Advances in Natural Sciences: Nanoscience and Nanotechnology, vol. 4, no. 1, pp. 0130021 – 01300214, Jan. 18th 2013.

CONFERENCE PRESENTATIONS

1. S. Goodnick, J. Shoemaker, H. Surdi, R. Vatan, R. Nemanich, M. Dutta, R. Kaplar, J. Flicker, A. Binder, L. Gill, F. Palacios, and S. Chowdhury, “Ultrawide Bandgap Semiconductors: Influence of Material Properties on Power Device Performance”, 2022 Power Electronics & Energy Conversion Workshop, Aug. 23-24, 2022 (Virtual).

R.J. Nemanich, F.A.M. Koeck, M. Dutta, et al., "Diamond Epitaxy for High Power and High Temperature Electronics", MRS Fall Meeting, Boston, MA, Nov. 26th-Dec. 1st, 2017.

3. H. Surdi, M. Dutta, and S. Chowdhury, "Demonstration of H-Terminated Single Crystal Diamond Hole-Channel MESFET with ~40mA/mm and 121kV/cm", 59th Electronic Materials Conference (EMC), University of Notre Dame, Jun.28th – 30th, 2017.

4. R.J. Nemanich, F.A.M. Koeck, M. Dutta, S. Chowdhury, R. Hathwar, and S.M. Goodnick, "Approaches for Vertical Diamond pindiodes with High Blocking Voltage and Bipolar Operation", Government Microcircuit Applications and Critical Technology Conference (GOMACTech), Reno, NV, Mar. 20th-23rd,2017.

5. R.J. Nemanich, F.A.M. Koeck, M. Dutta, S. Chowdhury, R. Hathwar, and S.M. Goodnick, "High Voltage Epitaxial p-i-n Diodes on (100) and (111) Diamond Substrates", MRS Fall Meeting, Boston, MA, Nov. 27th – Dec. 2nd,2016.

6. B. Eller, M. Kaur, F.A.M. Koeck, R.J. Nemanich, R. Hathwar, S.M. Goodnick, M. Dutta, S. Chowdhury, and J. Lyons, "High Temperature Diamond Electronics for Actuator and Sensor Applications," NASA Venus Exploration Analysis: Washington, DC, Nov. 29th, 2016.

7. R.J. Nemanich, F.A.M. Koeck, J. Shammas, Y. Yang, M. Dutta, R. Hathwar, S.Chowdhury, S. Goodnick, and Y. Zhao, "Diamond: an Ultra Wide Bandgap Semiconductor for Electronics and Energy Conversion", IEEE Electron Device Society - Lester Eastman Conference on High Performance Devices, Lehigh University, PA, Aug. 2nd – Aug. 4th, 2016.

8. M. Dutta, F. A. M. Koeck, R. Hathwar, S. M. Goodnick, R. J. Nemanich and S. Chowdhury, “Diamond Based Schottky PIN Diodes with Breakdown Voltage > 750V”, IEEE Electron Device Society - Lester Eastman Conference on High Performance Devices, Lehigh University, PA, Aug. 2nd – Aug. 4th, 2016.

8. F.A.M. Koeck, M. Dutta, R. Hathwar, S. Chowdhury, S.M. Goodnick, and R.J. Nemanich, "Doped Diamond Homoepitaxy on (100) Substrates for High Power P-I-N Diodes", MRS Spring Meeting, Phoenix, AZ, Mar. 28th – Apr. 1st,2016.

9. R. Hathwar, M. Dutta, F.A.M. Koeck, S.M. Goodnick, and S. Chowdhury, "Simulation of Diamond PNP Bipolar Junction Transistor", MRS Spring Meeting, Phoenix, AZ, Mar. 28th – Apr. 1st,2016.

10. M. Dutta, F.A.M. Koeck, R. Hathwar, S.M. Goodnick, R. J. Nemanich, and S. Chowdhury, "Diamond Based Diodes for High Voltage and High Temperature Applications", MRS Spring Meeting, Phoenix, AZ, Mar. 28th – Apr. 1st,2016.

11. M. Dutta, F.A.M. Koeck, R.J. Nemanich, and S. Chowdhury, "Diamond-based P-I-N Diode Demonstrating a Breakdown Voltage >150V", 42nd International Symposium on Compound Semiconductors (ISCS) – Compound Semiconductor Week (CSW), University of California , Santa Barbara, CA, Jun. 28th – Jul. 1st,2015 (Late News).

12. M. Dutta, F. A. M. Koeck, R. J. Nemanich and S. Chowdhury, "P-i-n diodes enabled by homoepitaxially grown phosphorus doped diamond with breakdown electric field >1.25 MV/cm," 73rd Annual Device Research Conference (DRC), Columbus, OH, 2015, pp. 184-184 (Late News).

13. M. Dutta, F.A.M. Koeck, R. Hathwar, S. Mandal, S.M. Goodnick, R.J. Nemanich, and S. Chowdhury, “Development of Low Resistance Contacts to Phosphorus Doped Diamond”, Workshop on Compound Semiconductor Materials and Devices (WOCSEMMAD), Isle of Palms, SC, Feb. 16th. – Feb. 19th, 2015 (Invited Talk).

14. N. Bhandari, J. Charles, M. Dutta, P. Das, M. Cahay, R. Newrock, and S. Herbert, "Tunable All Electric Spin Polarizer Using A Quantum Point Contact With Two Pairs of In-Plane Side Gates", APS March Meet, Baltimore, MD, Mar. 18th – 22nd, 2013.

15. M. Cahay, N. Bhandari, M. Dutta, J. Charles, R. Newrock, and S. Herbert, “Spin polarization in side gated single and dual quantum point contacts with lateral spin orbit coupling”, Development of Man-made Electronic Materials and Devices: Past and Future Workshop, University of North Carolina – Charlotte, NC , May 5th – 7th 2013.